Graphene-based materials are regarded as the key to building carbon-based platforms because of their unique two-dimensional material properties. In addition to graphene field effect tubes, graphene-based non-volatile memories are also an important part of building carbon-based platforms. Graphene-based materials have rich resistive switching mechanisms, excellent electronic properties, optical properties, and excellent impermeability, so that graphene-based materials can be used in various functional layers of memristors to prepare devices with low power consumption, long life, and Ultra-thin, ultra-transparent, flexible, high-stability large-scale integrated devices. This article reviews the different classifications of graphene-based memristors and the resistive switching principle of graphene-based materials. Taking the sandwich structure as an example, it introduces in detail the development status, working principle, and future development direction of graphene-based materials as the resistive layer, electrode layer, and modification layer of memristors. It provides researchers with ways to prepare graphene-based memristors.

Di Chen, Qiang Wang, Lanzhi Yue, Kangfei Zhao. Development and application of graphene-based materials in memristors. Academic Journal of Materials & Chemistry (2024) Vol. 5, Issue 1: 72-81. https://doi.org/10.25236/AJMC.2024.050112.

[1] Novoselov K S, Geim A K, Morozov S V, et al. Electric field in atomically thin carbon films [J]. Science, 2004, 306(5696): 666-669. 

[2] Rueckes T, Kim K, Joselevich E, et al. Carbon nanotube-based nonvolatile random access memory for molecular computing [J]. Science, 2000, 289(5476): 94-97.

[3] Avouris P, Chen Z, Perebeinos V. Carbon-based electronics [J]. Nature Nanotechnology, 2007, 2(10): 605-615.

[4] Novoselov K S, Geim A K, Morozov S, et al. Two-dimensional gas of massless dirac fermions in graphene[J]. Nature, 2005, 438(7065):197-200. 

[5] Balandin AA, Ghosh S, Bao W, et al. Superior thermal conductivity ofsingle-layer graphene[J]. Nano Lett. 2008, 8(3):902-907. 

[6] Zhang L, Zhang F, Yang X, et al. Porous 3D graphene-based bulk materials with exceptional high surface area and excellent conductivity for supercapacitors [J]. Sci Rep, 2013, 3:1408-1410. 

[7] Becerril HA, Mao J, Liu Z, et al. Evaluation of solution-processed reduced graphene oxide films as transparent conductors [J]. ACS Nano, 2008, 2(3):463-470

[8] Eda G, Fanchini G, Chhowalla M. Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material [J]. Nat Nanotechnol, 2008, 3(5): 270-274. 

[9] Cote L J, Kim F, Huang J. Langmuir-blodgett assembly of graphite oxide single layers [J]. Journal of the American Chemical Society, 2009, 131(3): 1043-1049. 

[10] Yusupov, A., et al. "Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence." 2022 International Conference on Information Science and Communications Technologies (ICISCT). IEEE, 2022.1-7.

[11] Jeong, Doo Seok, et al. "Emerging memories: resistive switching mechanisms and current status." Reports on progress in physics 75.7 (2012): 076502.

[12] Wang Z, Ambrogio S, Balatti S, et al. Postcycling degradation in metal-oxide bipolar resistive switching memory[J]. IEEE Transactions on Electron Devices, 2016, 63(11): 4279-4287.

[13] Kim S K, Kim J Y, Choi S Y, et al. Direct observation of conducting nanofilaments in graphene‐oxide‐resistive switching memory[J]. Advanced Functional Materials, 2015, 25(43): 6710-6715.

[14] Yi M, Cao Y, Ling H, et al. Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film [J]. Nanotechnology, 2014, 25(18): 185202.

[15] Valanarasu S, Kulandaisamy I, Kathalingam A, et al. High-performance memory device using graphene oxide flakes sandwiched polymethylmethacrylate layers [J]. Journal of Nanoscience and Nanotechnology, 2013, 13(10): 6755-6759.

[16] Wedig, Anja, et al. "Nanoscale cation motion in TaO x, HfO x and TiO x memristive systems." Nature nanotechnology 11.1 (2016): 67-74.

[17] Sparvoli M, Marma J S, Jorge F O, et al. Simulation of neuronal membrane behavior based on graphene oxide memristor [J]. Physica status solidi (a), 2023: 2200591.

[18] Yan X, Zhang L, Yang Y, et al. Highly improved performance in Zr 0.5 Hf 0.5 O 2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory [J]. Journal of Materials Chemistry C, 2017, 5(42): 11046-11052.

[19] Yan X, Zhang L, Chen H, et al. Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning [J]. Advanced Functional Materials, 2018, 28(40): 1803728.

[20] Tao Y, Zhao P, Li Y, et al. Reliable restriction of conductive filament in graphene oxide based RRAM devices enabled by a locally graphitized amorphous carbon layer [J]. Japanese Journal of Applied Physics, 2020, 59(5): 054002 

[21] Ngo H T, Thi M T N, Do D P, et al.Low operating voltage resistive random access memory based on Graphene Oxide – Polyvinyl alcohol Nanocomposite Thin Films[J].Journal of Science Advanced Materials and Devices, 2020, 5(2).DOI:10.1016/j.jsamd.2020.04.008.

[22] Zhao E, Liu S, Liu X, et al. Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite [J]. Nano, 2020, 15(09): 2050111.

[23] Han B, Mu H, Chen J, et al. High-performance hybrid graphene-perovskite photodetector based on organic nano carbon source-induced graphene interdigital electrode film on quartz substrate[J]. Carbon, 2023, 204: 547-554.

[24] Shin H W, Son J Y. Resistive switching characteristics of graphene/NiO/highly ordered pyrolytic graphite resistive random access memory capacitors [J]. Journal of Alloys and Compounds, 2019, 772: 900-904. 

[25] Zhao H, Tu H, Wei F, et al. Highly transparent dysprosium oxide-based RRAM with multilayer graphene electrode for low-power nonvolatile memory application [J]. IEEE Transactions on Electron Devices, 2014, 61(5): 1388-1393.

[26] Lin Y, Wang Z, Zhang X, et al. Photoreduced nanocomposites of graphene oxide/N-doped carbon dots toward all-carbon memristive synapses [J]. NPG Asia Materials, 2020, 12(1): 64.

[27] Liu, Sen, et al. "Eliminating negative‐SET behavior by suppressing nanofilament overgrowth in cation‐based memory." Advanced Materials 28.48 (2016): 10623-10629.

[28] Sun P, Wang K, Zhu H. Recent developments in graphene‐based membranes: structure, mass‐transport mechanism and potential applications [J]. Advanced materials, 2016, 28(12): 2287-2310.