International Journal of Frontiers in Engineering Technology, 2024, 6(4); doi: 10.25236/IJFET.2024.060417.
Zhen Zhao
School of Electronic Information and Electrical Engineering, Changsha University, Changsha, 410022, China
In this paper, the study designs a multi-layer MoS2/Ge heterojunction PIN photodetector, capitalizing on the high absorptivity and tunable bandgap properties of the two-dimensional material MoS2. To mitigate dark current and minimize noise, a Schottky contact is incorporated into the photodetector, enhancing its detection capabilities. The device's performance parameters were simulated using Silvaco TCAD software. The results indicate a dark current as low as 1.27×10-19 A and a photocurrent reaching 10-7 A. The device exhibits stable responses across ultraviolet, visible, and infrared spectra. The transient response analysis reveals a rise time of 1.6 microseconds and a fall time of 1.1 microseconds, with an optical modulation frequency of 500 MHz and an operating bandwidth of up to 23.4 GHz. These characteristics confirm the photodetector's capability for stable operation in ultrafast light detection scenarios. Additionally, the noise equivalent power of the photodetector reaches an impressive 10-18 W/Hz0.5, which is 1012 Jones higher than conventional detectors, underscoring the MoS2/Ge heterojunction photodetector's significant potential for applications in low-light and ultrafine light detection scenarios.
MoS2, Heterojunction Photodetector, Schottky contact, Transient response
Zhen Zhao. Design and performance analysis of PIN-type photodetector with optimized Schottky contact. International Journal of Frontiers in Engineering Technology (2024), Vol. 6, Issue 4: 103-108. https://doi.org/10.25236/IJFET.2024.060417.
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