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International Journal of New Developments in Engineering and Society, 2020, 4(1); doi: 10.25236/IJNDES.040127.

Analysis of Light Absorption Properties of Composite Semiconductor Photocatalyst Materials

Author(s)

Ping Zhang

Corresponding Author:
Ping Zhang
Affiliation(s)

Water and Waste-Water Science and Engineering Department of Water Conservancy and Civil Engineering, Shandong Agricultural University Tai'an, Shandong 271000, China

Abstract

The solid material of coupled semiconductor WO-TiO, was prepared by a sol-gel method. The photocatalyst WO-TiO supported metallic Cu was prepared by an isovolumic impregnation method. The surface structure, particle size and photo absorption performance of the materials were characterized by XRD, Raman, TPR, IR, TEM, XPS and UV-Vis. The experiment results show that 10wt%WO disperses on the surface of TiO support with one monolayer of non-crystalline phase, average particle size of 1wt%Cu/10wt%WO-TiOis about 15nm. Blue shifting of photo absorption edges is observed clearly after the addition of WO on the surface of TiO.The lattice WO forms and photo absorption performance decreases when the supporting amount of WO is more than that of the monolayer phase(>10wt%). The formation of bond W-O-Ti in the solid systems promotes the transfer of generating charge carriers between WO and TiO. Loaded metalic Cu accelerates the transformation from the tetrahedrally coordinated W species to the octahedrally coordinated W species.

Keywords

Composite semiconductor, Photocatalyst, Material structure, Light absorption performance

Cite This Paper

Ping Zhang. Analysis of Light Absorption Properties of Composite Semiconductor Photocatalyst Materials. International Journal of New Developments in Engineering and Society (2020) Vol.4, Issue 1: 203-209. https://doi.org/10.25236/IJNDES.040127.

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