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Academic Journal of Computing & Information Science, 2021, 4(7); doi: 10.25236/AJCIS.2021.040714.

A New Circuit Model of Bipolar Junction Transistor


Tao Wu

Corresponding Author:
Tao Wu

Shenzhen Research Institute of Sun Yat-sen University, Shenzhen, China


Bipolar junction transistor or BJT is supposed to cost much more power and areas than MOSFET, but its frequency domain response seems better than MOSFETs. In this paper, a new circuit model for BJT is proposed, and the three-terminal circuit includes two MOSFETs and one Schottky diode, which can then be denoted by one MOSFET and a reversely-biased diode. If the new circuits are applied in technology processes for manufacturing, then MOS technology may be illuminated by early BJT to fabricate new devices.


Bipolar, transistor, MOSFET, schottky junction, IGBT

Cite This Paper

Tao Wu. A New Circuit Model of Bipolar Junction Transistor. Academic Journal of Computing & Information Science (2021), Vol. 4, Issue 7: 96-100. https://doi.org/10.25236/AJCIS.2021.040714.


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