Bipolar junction transistor or BJT is supposed to cost much more power and areas than MOSFET, but its frequency domain response seems better than MOSFETs. In this paper, a new circuit model for BJT is proposed, and the three-terminal circuit includes two MOSFETs and one Schottky diode, which can then be denoted by one MOSFET and a reversely-biased diode. If the new circuits are applied in technology processes for manufacturing, then MOS technology may be illuminated by early BJT to fabricate new devices.

Tao Wu. A New Circuit Model of Bipolar Junction Transistor. Academic Journal of Computing & Information Science (2021), Vol. 4, Issue 7: 96-100. https://doi.org/10.25236/AJCIS.2021.040714.

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