Welcome to Francis Academic Press

Academic Journal of Materials & Chemistry, 2024, 5(1); doi: 10.25236/AJMC.2024.050101.

Deep Ultraviolet Detector Based on Low-Temperature Fabricated ZnO/Ga2O3 Heterojunction


Guanhua Wu, Junlin Fang, Zhenhua Tang

Corresponding Author:
Zhenhua Tang

School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, China


The day-blind ultraviolet detector has been widely recognized due to its enormous potential in military and civilian applications such as missile tracking, flame detection, and electrical grid security. In comparison to the narrow bandgap semiconductor material Si, amorphous Ga2O3 is possessed of an ultra-wide bandgap, high-temperature resistance, high-pressure resistance, and the advantage of low-temperature and low-cost preparation, making it an ideal material for day-blind ultraviolet detectors. In this study, sol-gel and magnetron sputtering methods were employed to fabricate Ga2O3/ZnO heterojunction deep ultraviolet detectors. Compared to pure Ga2O3 detectors, a reduction in dark current by an order of magnitude was observed in the Ga2O3/ZnO heterojunction detectors. The photocurrent-to-dark current ratio increased by approximately 50 times, and the responsiveness increased by nearly an order of magnitude, resulting in a lower detection rate. This improvement can be attributed to the Ga2O3/ZnO heterojunction. Additionally, detector arrays were prepared, and the uniformity of the fabricated thin films was verified.


Wide bandgap, deep ultraviolet detector, sol-gel method, amorphous gallium oxide, zinc oxide

Cite This Paper

Guanhua Wu, Junlin Fang, Zhenhua Tang. Deep Ultraviolet Detector Based on Low-Temperature Fabricated ZnO/Ga2O3 Heterojunction. Academic Journal of Materials & Chemistry (2024) Vol. 5, Issue 1: 1-6. https://doi.org/10.25236/AJMC.2024.050101.


[1] Bin Zhao,Fei Wang,Hongyu Chen, et al. An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO–Ga2O3 Heterostructures[J].Advanced Functional Materials, 2017.

[2] Razeghi M. Deep ultraviolet light-emitting diodes and photodetectors for UV communications [C]//Optoelectronic Integrated Circuits VII. SPIE, 2005, 5729: 30-40.

[3] Zheng W, Zhang Z, Lin R, et al. High‐Crystalline 2D Layered PbI2 with Ultrasmooth Surface: Liquid‐Phase Synthesis and Application of High‐Speed Photon Detection [J]. Advanced Electronic Materials, 2016, 2(11): 1600291

[4] Hu Q, Zheng W, Lin R, et al. Oxides/graphene heterostructure for deep-ultraviolet photovoltaic photodetector[J]. Carbon, 2019, 147: 427-433.

[5] Kang C H, Dursun I, Liu G, et al. High-speed colour-converting photodetector with all-inorganic CsPbBr3 perovskite nanocrystals for ultraviolet light communication[J]. Light: Science & Applications, 2019, 8(1): 94.

[6] Liu B, Chen D, Lu H, et al. Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors[J]. Advanced Materials, 2020, 32(27): 1904354.

[7] Chen H, Yu P, Zhang Z, et al. Ultrasensitive self‐powered solar‐blind deep‐ultraviolet photodet-ector based on all‐solid‐state polyaniline/MgZnO bilayer[J]. Small, 2016, 12(42): 5809-5816.

[8] Kong W Y, Wu G A, Wang K Y, et al. Graphene-β-Ga2O3  heterojunction for highly sensitive deep UV photodetector application[J]. Adv. Mater, 2016, 28(48): 10725-10731.

[9] Wei M, Yao K, Liu Y, et al. A solar‐blind UV detector based on graphene‐microcrystalline dia-mond heterojunctions [J]. Small, 2017, 13(34): 1701328.

[10] Cui S, Mei Z, Zhang Y, et al. Room‐temperature fabricated amorphous Ga2O3 high‐response‐speed solar‐blind photodetector on rigid and flexible substrates[J]. Advanced Optical Materials, 2017, 5(19): 1700454.

[11] Li Q, Lin J, Liu T Y, et al. Gas-mediated liquid metal printing toward large-scale 2D semiconductors and ultraviolet photodetector[J]. npj 2D Materials and Applications, 2021, 5(1): 36.

[12] Kuramata A, Koshi K, Watanabe S, et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth[J]. Japanese Journal of Applied Physics, 2016, 55(12): 1202A2.

[13] Du S, Yu N, Lin X, et al. High performance ultraviolet A/ultraviolet C detector based on amorphous Ga2O3/ZnO Nanoarrays/GaN structure[J]. Physica E: Low-dimensional Systems and Nanostructures, 2022, 144: 115398.

[14] Zhou C, Liu K, Chen X, et al. Performance improvement of amorphous Ga2O3 ultraviolet photo-detector by annealing under oxygen atmosphere[J]. Journal of Alloys and Compounds, 2020, 840: 155585.

[15] Wang H, Ma J, Cong L, et al. Solar-blind UV photodetector with low-dark current and high-gain based on ZnO/Au/ Ga2O3 sandwich structure[J]. Materials Today Physics, 2022, 24: 100673.

[16] Li H, Li Y, Xiao G, et al. Simple fabrication ZnO/β- Ga2O3 core/shell nanorod arrays and their photoresponse properties[J]. Optical Materials Express, 2018, 8(4): 794-803.

[17] Jia M, Wang F, Tang L, et al. High-performance deep ultraviolet photodetector based on NiO/β- Ga2O3 heterojunction[J]. Nanoscale research letters, 2020, 15(1): 47.

[18] Bukke R N, Mude N N, Bae J, et al. Nano-scale Ga2O3 interface engineering for high-performance of ZnO-based thin-film transistors[J]. ACS Applied Materials & Interfaces, 2022, 14(36): 41508-41519.

[19] Chen X, Ren F, Gu S, et al. Review of gallium-oxide-based solar-blind ultraviolet photodetectors[J]. Photonics Research, 2019, 7(4): 381-415.

[20] Xu J, Zheng W, Huang F. Gallium oxide solar-blind ultraviolet photodetectors: A review[J]. Journal of Materials Chemistry C, 2019, 7(29): 8753-8770.

[21] Quemener V, Alnes M, Vines L, et al. The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD[J]. Journal of Physics D: Applied Physics, 2012, 45(31): 315101.

[22] Liu Z, Liu Y, Wang X, et al. Energy-band alignments at ZnO/Ga2O3 and Ta2O5/Ga2O3 heterointer-faces by X-ray photoelectron spectroscopy and electron affinity rule[J]. Journal of Applied Physics, 2019, 126(4).

[23] Li G, Zhang K, Wu Y, et al. Self-powered solar-blind ultraviolet photodetectors with Ga2O3 nano-wires as the interlayer[J]. Vacuum, 2023: 112277.