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Academic Journal of Materials & Chemistry, 2024, 5(1); doi: 10.25236/AJMC.2024.050104.

Ion Beam Sputtering of Quantum Dots: Techniques, Challenges, and Future Perspectives


Lu Han, Qiang Wang, Du Wu, Yuansha Xie

Corresponding Author:
Qiang Wang

School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an, Shaanxi Province, China


This review presents a comprehensive examination of ion beam sputtering as a versatile technique for the fabrication of quantum dots (QDs), offering insights into the operational principles, historical development, material selection, and the refinement of fabrication techniques. We discuss the optimization of sputtering parameters to achieve precise control over the size, shape, and distribution of QDs, alongside the critical role of characterization methods in assessing their structural, chemical, and optical properties. Applications in fields ranging from biomedicine to optoelectronics are evaluated, highlighting the unique advantages QDs synthesized by ion beam sputtering hold. Furthermore, we address the challenges currently faced, such as scalability, stability, and environmental impact, and explore the potential solutions and interdisciplinary research efforts required to overcome these hurdles. The review culminates in a future outlook that anticipates the integration of advanced automation and machine learning for process optimization, the development of new materials for sustainable QD production, and the expansion of QD applications into emerging technological frontiers. Through this synthesis, we aim to provide a pathway for future research directions and the broader implications of ion beam sputtered QDs in advancing next-generation technologies.


Ion Beam Sputtering, Quantum Dots, Nanomaterial Synthesis

Cite This Paper

Lu Han, Qiang Wang, Du Wu, Yuansha Xie. Ion Beam Sputtering of Quantum Dots: Techniques, Challenges, and Future Perspectives. Academic Journal of Materials & Chemistry (2024) Vol. 5, Issue 1: 18-24. https://doi.org/10.25236/AJMC.2024.050104.


[1] Y.C. Tseng, A.U. Mane, J.W. Elam, S.B. Darling, Enhanced lithographic imaging layer meets semiconductor manufacturing specification a decade early, Adv.Mater. 24 (2012) 2608e2613.

[2] M.T. Spuller, D.W. Hess, Incomplete wetting of nanoscale thin-film structures, J. Electrochem. Soc. 150 (2003) G476eG480.

[3] GAGO, Raúl, et al. Production of ordered silicon nanocrystals by low-energy ion sputtering.Applied Physics Letters, 2001, 78.21: 3316-3318.

[4] Chini T K, Datta D P, Bhattacharyya S R. Ripple formation on silicon by medium energy ion bombardment[J]. Journal of Physics: Condensed Matter, 2009, 21(22): 224004.

[5] Munoz-Garcia J, Vazquez L, Castro M, et al. Self-organized nanopatterning of silicon surfaces by ion beam sputtering [J]. Materials Science and Engineering: R: Reports, 2014, 86: 1-44.

[6] Datta D P, Chini T K. Coarsening of ion-beam-induced surface ripple in Si: Nonlinear effect vs. geometrical shadowing [J]. Physical Review B, 2007, 76(7): 075323.

[7] Madi C S. Linear stability and instability patterns in ion bombarded silicon surfaces[M]. Harvard University, 2011.

[8] Basu T, Mohanty J R, Som T. Unusual pattern formation on Si (100) due to low energy ion bombardment [J]. Applied surface science, 2012, 258(24): 9944-9948.

[9] Norris S A, Aziz M J. Ion-induced nanopatterning of silicon: Toward a predictive model[J]. Applied Physics Reviews, 2019, 6(1).

[10] Zhou J, Hildebrandt M, Lu M. Self-organized antireflecting nano-cone arrays on Si (100) induced by ion bombardment [J]. Journal of applied Physics, 2011, 109(5).

[11] Carter G. Proposals for producing novel periodic structures by ion bombardment sputtering[J]. Vacuum, 2004, 77(1): 97-100.

[12] Carter G. The physics and applications of ion beam erosion[J]. Journal of Physics D: Applied Physics, 2001, 34(3): R1.

[13] Bradley R M. Theory of nanodot and sputter cone arrays produced by ion sputtering with concurrent deposition of impurities [J]. Physical Review B, 2011, 83(19): 195410.

[14] Shang N G, Ma X L, Liu C P, et al. Arrays of Si cones prepared by ion beams: growth mechanisms[J]. Physica status solidi (a), 2010, 207(2): 309-315.

[15] Bhattacharjee S, Karmakar P, Chakrabarti A. Key factors of ion induced nanopatterning[J]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 278: 58-62.

[16] Kang M, Goldman R S. Ion irradiation of III–V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals[J]. Applied Physics Reviews, 2019, 6(4).

[17] Kumar T, Singh U B, Kumar M, et al. Tuning of ripple patterns and wetting dynamics of Si (100) surface using ion beam irradiation[J]. Current Applied Physics, 2014, 14(3): 312-317.

[18] Kalyanasundaram N, Moore M C, Freund J B, et al. Structure and stress evolution due to medium energy ion bombardment of silicon[C].Nanomechanics of Materials and Structures. Springer Netherlands, 2006: 191-198.