International Journal of Frontiers in Engineering Technology, 2024, 6(2); doi: 10.25236/IJFET.2024.060202.
Jian Yang, Shike Wei, Dong Xu, Xuan Liu
School of Electrical Engineering and Automation, Nanjing Normal University, Nanjing, China
In recent years, silicon carbide MOSFET has been widely used in switching power supply, electric vehicle and grid-connected inverter. In order to accurately predict the switching characteristics of silicon carbide MOSFET in the design stage, it is necessary to establish an accurate silicon carbide MOSFET model. In this paper, a continuous function is used to describe the static characteristics of MOSFET. Secondly, a parasitic parameter extraction method based on two-port S-parameter measurement is used to extract the parasitic parameters of MOSFET introduced by packaging and other factors, and consider the nonlinear characteristics of interstage capacitance. Finally, a double-pulse experimental platform was set up to verify the accuracy of the established model. The experimental results show that the established model can reflect the working condition of MOSFET in actual conditions with high accuracy.
Parasitic parameter, Silicon carbide MOSFET, Temperature parameter, Behavior model
Jian Yang, Shike Wei, Dong Xu, Xuan Liu. A variable-temperature parameter model for SiC MOSFETs considering parasitic parameters. International Journal of Frontiers in Engineering Technology (2024), Vol. 6, Issue 2: 6-12. https://doi.org/10.25236/IJFET.2024.060202.
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