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Academic Journal of Materials & Chemistry, 2024, 5(2); doi: 10.25236/AJMC.2024.050210.

Research progress on the resistive switching materials in optoelectronic memristors


Kangfei Zhao, Qiang Wang, Di Chen

Corresponding Author:
Qiang Wang

School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an, Shaanxi Province, China


Optoelectronic memristors, combining photoelectronic and resistive switching materials, have garnered considerable attention in recent years due to their unique characteristics. This article provides an overview of the latest research progress in optoelectronic memristors and the associated resistive switching materials. Emphasis is placed on discussing the performance and potential applications of various materials, including oxide materials, ferroelectric materials, perovskite materials, two-dimensional materials, and organic materials. The review also highlights the advantages and challenges encountered by optoelectronic memristors and provides insights into future development trends.


Optoelectronic memristor, Resistive switching materials, Device performance

Cite This Paper

Kangfei Zhao, Qiang Wang, Di Chen. Research progress on the resistive switching materials in optoelectronic memristors. Academic Journal of Materials & Chemistry (2024) Vol. 5, Issue 2: 64-69. https://doi.org/10.25236/AJMC.2024.050210.


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