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Academic Journal of Materials & Chemistry, 2024, 5(3); doi: 10.25236/AJMC.2024.050311.

A Review of Recent Progress on Graphene Fabrication through Pyrolysis of Silicon Carbide

Author(s)

Lanzhi Yue, Qiang Wang, Di Chen

Corresponding Author:
Qiang Wang
Affiliation(s)

School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an, China

Abstract

Graphene, renowned for its exceptional electromagnetic and thermal properties, has found widespread applications across diverse fields, including sensors and electronic transistors. The performance of graphene hinges on the quality of the material, thereby dictating its suitability for various applications. Despite its promising attributes, current production techniques fail to satisfy the demands, particularly in high-performance applications like transistors. Since the pioneering isolation of graphene, significant strides have been made in the epitaxial growth of graphene on silicon carbide over nearly two decades. This method is recognized as one of the most auspicious approaches for achieving large-area, uniform, and controllable high-quality graphene production. This paper aims to consolidate the existing methodologies for graphene production via silicon carbide epitaxy, delineate their respective advantages and drawbacks, and proffer insights into potential avenues for future development.

Keywords

graphene, silicon carbide, pyrolysis

Cite This Paper

Lanzhi Yue, Qiang Wang, Di Chen. A Review of Recent Progress on Graphene Fabrication through Pyrolysis of Silicon Carbide. Academic Journal of Materials & Chemistry (2024) Vol. 5, Issue 3: 73-78. https://doi.org/10.25236/AJMC.2024.050311.

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