International Journal of Frontiers in Engineering Technology, 2024, 6(6); doi: 10.25236/IJFET.2024.060603.
Yingqi Yu, Chunyan Wang
School of Information Technology, Jiangsu Maritime Institute, Nanjing, Jiangsu, 211170, China
Diode has become the most widely used device in the field of power electronics because of its unidirectional conductivity. It is very important to study the working principle and model of diode. This article first expounds the forming principle of P-N junction and PIN junction, then respectively the diode of the steady state and transient state model was established, and then separately from the Infineon website to download the IDW100E60 diode model and discrete device based on ideal diode model LTspice simulation, comparison and analysis the differences in the waveform, and the possible reasons for error is given. Finally, buck circuit was built, and the reverse recovery characteristics of the diode model were observed in the actual circuit.
Diode modeling, ideal device, reverse recovery characteristics
Yingqi Yu, Chunyan Wang. Technology and application of solar thermal power generation. International Journal of Frontiers in Engineering Technology (2024), Vol. 6, Issue 6: 18-26. https://doi.org/10.25236/IJFET.2024.060603.
[1] Orfao B, Vasallo B G, Moro-Melgar D, et al. Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes[J]. IEEE Transactions on Electron Devices, 2020, 67(9): 3530-3535.
[2] Cui J, Zhang Y, Wei H, et al. Electro-Thermal Model for Schottky Barrier Diode Based on Self-Heating Effect[C]. 2021 IEEE 4th International Conference on Electronics and Communication Engineering (ICECE). IEEE, 2021: 330-334.
[3] Wu Q, Chen W, Yu C, et al. Multilayer machine learning-assisted optimization-based robust design and its applications to antennas and array[J]. IEEE Transactions on Antennas and Propagation, 2021, 69(9): 6052-6057.