International Journal of Frontiers in Engineering Technology, 2025, 7(3); doi: 10.25236/IJFET.2025.070303.
Lipeng Wu
School of Physics and Opto-Electronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Guangdong University of Technology, Guangzhou, 510006, China
With the emergence of new applications of infrared light detection technology, it is increasingly urgent to develop non-toxic and environmentally friendly alternative materials for heavy metal semiconductors. Ag2Se quantum dots (QDs) has a relatively narrow band gap and is highly suitable for optical detection in the near-infrared to mid-infrared spectral region. Moreover, Ag2Se QDs does not contain heavy metals and has a small impact on health and the environment. Due to the high electron mobility and wide spectral response characteristics of graphene and the high light absorption efficiency of QDs, the Ag2Se QDs/graphene composite photodetector (PDs) has the advantages of high response and wide spectral detection range. In this paper, we designed and constructed PDs based on Ag2Se QDs, and systematically studied the photoelectric detection performance. The photoelectric test of this device shows that under the irradiation of 808 nm light, Responsivity (R) is 342.24 A/W at a bias of 0.1 V, and Specific Detectivity (D*) is 3.35 × 1010 Jones. This work provides a reliable experimental idea for the preparation of high-performance infrared PDs.
Graphene, Photodetector, Quantum Dot
Lipeng Wu. Photodetector Based on Ag2Se Quantum Dots. International Journal of Frontiers in Engineering Technology (2025), Vol. 7, Issue 3: 15-20. https://doi.org/10.25236/IJFET.2025.070303.
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