International Journal of Frontiers in Engineering Technology, 2021, 3(1); doi: 10.25236/IJFET.2021.030107.
Yiqun Sun 1,a,*, Mengxia Zhou1,b, Yongan Wang1,c
1School of Electrical and Automation Engineering, Nanjing Normal University, Nanjing 210042, China
a [email protected], b [email protected], c [email protected]
*Corresponding Author: [email protected]
This paper adopts the method of combining impedance test and simulation to model the high frequency characteristics of series diode array. Firstly, the high frequency equivalent circuit model of series diode array is established and its impedance calculation method is explained; then use the vector network analyzer (VNA) to complete the impedance test of series diode array, and use the differential evolution algorithm (DE Algorithm) to fit and optimize the high frequency model parameters; finally The characteristics of the ideal diode and this high frequency model are compared under different frequency, and the PFC circuit simulation verification is carried out in ANSYS software. The results show that this high frequency model not only matches the characteristics of ideal diodes at low frequencies, but also reflects the high frequency characteristics of series diode arrays that are different from ideal diodes at high frequencies. The modeling effect is excellent.
series diode array, DE algorithm, high frequency model, parasitic parameters
Yiqun Sun, Mengxia Zhou, Yongan Wang. High Frequency Modeling Method of Series Diode Array Based on Differential Evolution Algorithm. International Journal of Frontiers in Engineering Technology (2021), Vol. 3, Issue 1: 39-44. https://doi.org/10.25236/IJFET.2021.030107.
[1] Jiangyi Li, Yang Tang, Ding Wang, et al. Si Schottky diode DC and high frequency modeling[J]. Journal of Electron Devices, 2017, 40(001): 6-10.
[2] Heqing Zhong, Zhixin Xu, Yunping Zou, et al. Influence of Parasitic Capacitance on the Charging Power Supply Characteristics of Series Resonant Capacitor[J]. Proceedings of The Chinese Society for Electrical Engineering, 2005(10): 40-44.
[3] Mengxia Z., Yang Z., Wei Y., et al. Investigation on conducted EMI noise source impedance extraction for electromagnetic compatibility based on SP-GA algorithm[J]. Power Electronics, IET, 2019, 12(7): 1792-1799.
[4] Yongan Wang, Yang Z., et al. Modeling and Application of Ring Inductor Based on Evolutionary Difference Algorithm[J]. Journal of nanjing normal university (engineering), 2020, 20(03): 32-37.
[5] Le Zhang. Analysis and Optimization of High Frequency Parasitic Paramaters Based on Half Bridge LLC Resonant Converter[D]. Southeast University, 2019.
[6] Shiktorov P, Starikov E, Gruzinskis V, et al. Analytical model of high-frequency noise spectrum in Schottky-barrier diodes[J]. IEEE Electron Device Letters, 2008, 26(1): 2-4.
[7] Morariu R., Wang J., Cornescu A.C., et al. Accurate Small-Signal Equivalent Circuit Modeling of Resonant Tunneling Diodes to 110 GHz[J]. IEEE Transactions on Microwave Theory and Techniques, 2019, 67(99): 4332-4340.
[8] Karadzinov L.V., Hamill D.C. Analysis of the influence of diode reverse recovery on the operation and design of high-frequency rectifiers[C]// Applied Power Electronics Conference & Exposition. IEEE, 2000.