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Academic Journal of Materials & Chemistry, 2021, 2(1); doi: 10.25236/AJMC.2021.020103.

P-type Doping of Broad-band Nitride Semiconductors


Yaqi Liu1, Xichen Cai2, Lechen Liu3, Chenguang Yang4

Corresponding Author:
Yaqi Liu

1University College London, London, United Kingdom

2Southwest Jiaotong University, Chengdu, Sichuan, China

3Changsha New Channel-Changjun High school, Changsha, Hunan, China

4Chengdu University of Information Technology, Chengdu, Sichuan, China

These authors contributed equally to this work


GaN-based optoelectronic devices have been an important development direction for semiconductors and have been applied in several fields. P-type GaN thin film implementation is the core process for optoelectronic devices, and a lot of breakthrough results have been achieved in p-GaN research. For example, Si and Mg are used as the main doping elements. However, more effective doping of GaN materials is needed in order to make GaN materials play a greater electrical and optical advantage. In this paper, we take p-GaN as the main object of study and outline the conditions that need to be satisfied for effective doping of GaN materials. Emphasizing several factors that make the quality of p-type materials of GaN a bottleneck for application development, the results achieved in p-GaN research in recent years are presented.


Semiconductors, Gan Material, P-type Doping

Cite This Paper

Yaqi Liu, Xichen Cai, Lechen Liu, Chenguang Yang. P-type Doping of Broad-band Nitride Semiconductors. Academic Journal of Materials & Chemistry (2021) Vol. 2, Issue 1: 13-19. https://doi.org/10.25236/AJMC.2021.020103.


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