Academic Journal of Engineering and Technology Science, 2021, 4(8); doi: 10.25236/AJETS.2021.040810.
Wenhao Xie1, Linsheng Liu1, Xingpeng Liu2, Shuxiang Song1, Ximing Li1, Tianyang Feng2, Pengtang Dong1, Teng Miao1
1College of Electronic Engineering, Guangxi Normal University, Guilin 541004, China
2Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
In this paper, CdSSe nanowires with high crystal quality were growth through a chemical vapor deposition method, which used different temperature to control material evaporation rate. Scanning electron microscopy characterization found that these nanowires have a smooth surface structure. Fluorescence microscopy images showed that the nanowires were uniformly distributed in composition, and micro-PL showed that they have high crystalline quality. Photodetector constructed by single nanowire demonstrated a high responsivity of up to 2081A∙W^(-1), a fast rise time of 0.191s and a fall time of 0.192s at bias of 1V. These convincing results indicate that CdSSe nanowires will have a brilliant future in smart optoelectronics.
CdSSe nanowires, High crystal quality, Photodetector
Wenhao Xie, Linsheng Liu, Xingpeng Liu, Shuxiang Song, Ximing Li, Tianyang Feng, Pengtang Dong, Teng Miao. Chemical vapor deposition growth of CdSSe nanowires for high-performance photodetector. Academic Journal of Engineering and Technology Science (2021) Vol. 4, Issue 8: 97-102. https://doi.org/10.25236/AJETS.2021.040810.
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