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Academic Journal of Engineering and Technology Science, 2022, 5(4); doi: 10.25236/AJETS.2022.050408.

Growth and Characterization of InGaAs Nanowires


Xiaoying Liu1, Teng Miao1, Xingpeng Liu2, Ye Huang1, Yanling Li2, Hong Zhang2, Linsheng Liu1

Corresponding Author:
Linsheng Liu

1College of Electronic Engineering, Guangxi Normal University, Guilin, 541004, China

2Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China


In this paper, high crystal quality InAs, GaAs and InGaAs nanowires were grown by chemical vapor deposition in a double temperature zone tubular furnace by accurately controlling the source material and substrate temperature. Scanning electron microscopy (SEM) showed that the nanowires had uniform diameter, smooth surface and length up to tens of microns. XRD results showed that the nanowires were evenly distributed in composition and have a single crystal wurtzite structure. Raman spectral images further verified the crystal structure and composition of the nanowires. They showed that high-quality InGaAs nanowires were grown. The photodetector has good spectral response characteristics and sensitive sensing ability to rapidly changing optical signals.


InGaAs nanowires, High crystal quality, Morphology and characterization

Cite This Paper

Xiaoying Liu, Teng Miao, Xingpeng Liu, Ye Huang, Yanling Li, Hong Zhang, Linsheng Liu. Growth and Characterization of InGaAs Nanowires. Academic Journal of Engineering and Technology Science (2022) Vol. 5, Issue 4: 43-47. https://doi.org/10.25236/AJETS.2022.050408.


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