Academic Journal of Engineering and Technology Science, 2022, 5(4); doi: 10.25236/AJETS.2022.050408.
Xiaoying Liu1, Teng Miao1, Xingpeng Liu2, Ye Huang1, Yanling Li2, Hong Zhang2, Linsheng Liu1
1College of Electronic Engineering, Guangxi Normal University, Guilin, 541004, China
2Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China
In this paper, high crystal quality InAs, GaAs and InGaAs nanowires were grown by chemical vapor deposition in a double temperature zone tubular furnace by accurately controlling the source material and substrate temperature. Scanning electron microscopy (SEM) showed that the nanowires had uniform diameter, smooth surface and length up to tens of microns. XRD results showed that the nanowires were evenly distributed in composition and have a single crystal wurtzite structure. Raman spectral images further verified the crystal structure and composition of the nanowires. They showed that high-quality InGaAs nanowires were grown. The photodetector has good spectral response characteristics and sensitive sensing ability to rapidly changing optical signals.
InGaAs nanowires, High crystal quality, Morphology and characterization
Xiaoying Liu, Teng Miao, Xingpeng Liu, Ye Huang, Yanling Li, Hong Zhang, Linsheng Liu. Growth and Characterization of InGaAs Nanowires. Academic Journal of Engineering and Technology Science (2022) Vol. 5, Issue 4: 43-47. https://doi.org/10.25236/AJETS.2022.050408.
[1] Li Linsen, Wang Tao, Zhu Zhe. Design and characterization the InGaAs/GaAs multipe quantum wells near-infrared light detecting structure [J]. Application of Electronic Twchnique ,2021,47(7):118-124.
[2] Tan H, Fan C, Ma L, et al. Single-crystalline InGaAs nanowires for room-temperature high-performance near-infrared photodetectors[J]. Nano-micro letters, 2016, 8(1): 29-35.
[3] J. Groenen, R. Carles, G. Landa, Optical-phonon behavior inGa1-xInxAs: the role of microscopic strains and ionic plasmoncoupling. Phys. Rev. B 58(16), 10452–10462 (1998).
[4] C.S. Jung, H.S. Kim, G.B. Jung, K.J. Gong, Y.J. Cho, S.Y. Jang,C.H. Kim, C.-W. Lee,J. Park, Composition and phase tuned InGaAs alloy nanowires. J. Phys. Chem. C 115(16), 7843–7850(2011).
[5] Li H , Chen Y , Wei Z , et al. Optical property and lasing of GaAs-based nanowires[J]. Science China Materials, 2020, 63(8):1364-1381.
[6] H Jia, L Shen, X Li, et al. Investigation of localized state emissions in quaternary In GaAsSb/ AlGaAsSb multiple quantum wells grown by molecular beam epitaxy[J]. Optical Materials Express, 2020, 10(12): 3384-3392.
[7] Ali H, Zhang Y, Tang J, et al. High-responsivity photodetection by a self-catalyzed phase-pure p-GaAs nanowire[J]. Small, 2018, 14(17): e1704429.