Dan Wang, Jinying Huang
School of Optoelectronic Science, Chanchun College of Electronic Technology, Changchun, 130114, China
The band of infrared luminescence includes atmospheric windows of 1-3μm, 3-5μm, and 8-14μm, covering many important characteristic spectra. Therefore, the luminescent materials in this band are used in biomedical, satellite remote sensing, weapon guidance, industrial processing, Weapon penetration and other fields have broad application prospects. In this paper, the preparation method of doped bismuth telluride composite glass material was studied, and the luminescence properties of infrared luminescent composite glass in the 2.7μm band mid-infrared laser in the matrix material. In this paper, the TeO2-Nb2O5-Bi2O3 glass system was selected as the matrix glass to prepare the tellurate infrared emitting composite glass. The Bi3.20Te0.80O6.40 crystal is a three-dimensional growth method, and the nucleation and growth process of the glass-ceramic is a diffusion mechanism, which belongs to the crystallization behavior mainly controlled by diffusion. Transparent bismuth telluride composite glasses with different doping concentrations of rare earth ions were prepared by a two-step heat treatment method. The infrared luminescent composite glass prepared in this paper has strong penetrating ability to smoke and atmosphere, good transmission confidentiality and low loss, and has important application prospects in radar systems, infrared remote sensing, laser ranging and other fields. The final results of the study show that, by comparing the melting and purity of chemical reagents, it can be seen that the melting time consumed by bismuth oxide is 45 minutes, and a purity of 95.5% can be obtained. The time is shorter, which is conducive to reducing a certain cost.
Bismuth Telluride, Composite Glass, Infrared Emission, Diffusion Mechanism
Dan Wang, Jinying Huang. Preparation and Properties of a Kind of Tellurium Bismuthate Mid-infrared Luminescent Composite Glass. International Journal of Frontiers in Engineering Technology (2022), Vol. 4, Issue 6: 50-55. https://doi.org/10.25236/IJFET.2022.040608.
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