International Journal of Frontiers in Engineering Technology, 2022, 4(8); doi: 10.25236/IJFET.2022.040805.
Yuying Song1, Xiaocan Chen2
1School of Physics, Changchun University of Science and Technology, Changchun, 130013, China
2College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
As a special device that converts the measured physical quantity into electrical signal or other signal output according to specific rules, the sensor becomes the nerve ending connecting the natural world and the electronic world. Photoelectric sensors, as an important branch of sensors, play a central role in applications such as optical communication, imaging and detection, as electronic systems perceive external eyes. At present, the main sensor products in the market have defects such as limited detection wavelength, low responsivity and complex structure. In view of these problems and practical needs, combined with the advantages of graphene with wide detection wavelength range, high influence and high electron mobility, this paper proposes a graphene field effect tube photoelectric sensor with silicon nitride protective layer, and its preparation process, environmental stability test and photoelectric response characteristics are studied and analyzed. The results have potential application value. Graphene field effect transistor photoelectric sensor has many excellent characteristics, such as wide detection band, high response, good environmental stability and easy preparation and integration. It provides a new research idea for MEMS photoelectric sensor and has a very broad application prospect.
Graphene, photoelectric sensors, silicon oxide, terahertz, silicon nitride protective layer
Yuying Song, Xiaocan Chen. Study on Graphene Field Effect Tube Photoelectric Sensor. International Journal of Frontiers in Engineering Technology (2022), Vol. 4, Issue 8: 30-37. https://doi.org/10.25236/IJFET.2022.040805.
[1] Research report of Lianxun Securities on semiconductor industry in 2017.
[2] Novoselov K S, Geim A K, Morozov S V, et al. Electric Field Effect in Atomically Thin Carbon Films [J]. Science, 2004, 306 (5696): 666-9.
[3] Lu G, Yu K, Wen Z, et al. Semiconducting graphene: converting graphene from semimetal to semiconductor. [J]. Nanoscale, 2013,5 (4): 1353.
[4] Kuangda, Hu Wenbin. Research Progress of Graphene Composites [J]. Journal of Inorganic Materials, 2013 (3).
[5] Li Yongxi, Chen Yu, Zhuang Xiaodong, etc. Graphene Chemistry and Potential Applications [J]. Journal of Shanghai Second University of Technology, 2010, 27 (4): 259-271.
[6] Hu Rongyan, Jia Kunpeng, Chen Yang, etc. Research progress of graphene doping [J]. Micro-nano electronic technology, 2015.52 (11): 692-700.
[7] Sun, D. et a. Coherent control of ballistic photocurrents in multilayer epitaxial graphene using quantum interference. Nano Lett. 10.1293-1296(2010).
[8] Cao Yuchen, Guo Mingming. Graphene materials and their applications [J]. Petrochemical industry, 2016,45 (10): 1149-1159.
[9] Feng Tingting. Preparation and characteristics of graphene field effect transistors [D]. Beijing: Tsinghua University, 2014.