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International Journal of Frontiers in Engineering Technology, 2022, 4(8); doi: 10.25236/IJFET.2022.040805.

Study on Graphene Field Effect Tube Photoelectric Sensor


Yuying Song1, Xiaocan Chen2

Corresponding Author:
Yuying Song

1School of Physics, Changchun University of Science and Technology, Changchun, 130013, China

2College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China


As a special device that converts the measured physical quantity into electrical signal or other signal output according to specific rules, the sensor becomes the nerve ending connecting the natural world and the electronic world. Photoelectric sensors, as an important branch of sensors, play a central role in applications such as optical communication, imaging and detection, as electronic systems perceive external eyes. At present, the main sensor products in the market have defects such as limited detection wavelength, low responsivity and complex structure. In view of these problems and practical needs, combined with the advantages of graphene with wide detection wavelength range, high influence and high electron mobility, this paper proposes a graphene field effect tube photoelectric sensor with silicon nitride protective layer, and its preparation process, environmental stability test and photoelectric response characteristics are studied and analyzed. The results have potential application value. Graphene field effect transistor photoelectric sensor has many excellent characteristics, such as wide detection band, high response, good environmental stability and easy preparation and integration. It provides a new research idea for MEMS photoelectric sensor and has a very broad application prospect.


Graphene, photoelectric sensors, silicon oxide, terahertz, silicon nitride protective layer

Cite This Paper

Yuying Song, Xiaocan Chen. Study on Graphene Field Effect Tube Photoelectric Sensor. International Journal of Frontiers in Engineering Technology (2022), Vol. 4, Issue 8: 30-37. https://doi.org/10.25236/IJFET.2022.040805.


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