Xiaocan Chen1, Yuying Song2
1College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
2School of Physics, Changchun University of Science and Technology, Changchun, 130013, China
Due to the lack of gain mechanism and poor light absorption ability of graphene, it is difficult for single-chip graphene photovoltaic devices to obtain high photovoltaic conversion efficiency. In view of this bottleneck, this paper aims to solve the above problems by preparing heterostructures with perovskite materials in graphene. The transfer process of graphene film was optimized to reduce the p-type doping of graphene field effect transistor and significantly improve its mobility. Polymethyl methacrylate technology is applied to the graphite process to solve the problem of channel carbonized photoresist residue in semiconductor devices. In addition, vertical graphene nanowalls (GNWs) were fabricated on Si substrates by radio frequency plasma enhanced chemical vapor deposition (RF plasma enhanced CVD), and then perovskite / GNWs hybrid photodetectors were obtained. The experimental results show that the device has high sensitivity and stable performance. In the wavelength range of 635 nm, the reaction speed of the element reaches 3.2 × 105 A / W, and the response time is 24 ms (descending edge) to 8 ms.
perovskite, graphene, photodetector, field effect
Xiaocan Chen, Yuying Song. Development and Performance Study of Perovskite Graphene Photodetector. Academic Journal of Materials & Chemistry (2022) Vol. 3, Issue 2: 6-13. https://doi.org/10.25236/AJMC.2022.030202.
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