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International Journal of Frontiers in Engineering Technology, 2023, 5(8); doi: 10.25236/IJFET.2023.050801.

Prediction of Remaining Lifetime of Hall Current Sensor Based on Weibull Distribution

Author(s)

Shike Wei, Dong Xu, Xuan Liu, Jian Yang, Jiayu Zhang, Yishuai Cui

Corresponding Author:
Shike Wei
Affiliation(s)

Nanjing Normal University, Nanjing, Jiangsu, China

Abstract

The degradation mechanism of Hall current sensors is characterized by complexity, fluctuations, and nonlinearity, which poses a challenge to accurately predicting the lifetime of highly reliable and long-lived Hall current sensors. In this study, accelerated degradation tests were conducted on Hall current sensors, and performance degradation data was used to predict the sensor's reliability and remaining lifetime. Firstly, the working principle and degradation mechanism of Hall current sensors were analyzed, and the fluctuation of zero-point output voltage was identified as the performance degradation parameter. Next, the types of accelerated degradation models and test conditions were described, and a method based on the Weibull distribution was employed to estimate the pseudo-failure lifetime at various temperature stress levels under accelerated degradation testing. Finally, an accelerated model for the distribution parameters of pseudo-lifetime was derived using the Arrhenius model, thereby completing the reliability and remaining lifetime prediction of Hall current sensors under normal working conditions.

Keywords

Weibull distribution; Arrhenius model; Pseudo Failure Life; Remaining life

Cite This Paper

Shike Wei, Dong Xu, Xuan Liu, Jian Yang, Jiayu Zhang, Yishuai Cui. Prediction of Remaining Lifetime of Hall Current Sensor Based on Weibull Distribution. International Journal of Frontiers in Engineering Technology (2023), Vol. 5, Issue 8: 1-7. https://doi.org/10.25236/IJFET.2023.050801.

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