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Academic Journal of Materials & Chemistry, 2023, 4(7); doi: 10.25236/AJMC.2023.040711.

Prospect for Overcoming Sub-threshold Slope Degradation with NC-FETs


Zifan Xu

Corresponding Author:
Zifan Xu

Glasgow College, University of Electronic Science and Technology of China (UESTC), Chengdu, 611731, China


For conventional MOSFETs, with the reduction in the thickness of silicon dioxide, the value of subthreshold swing has reached 60 mV/dec, a minimum constrained by thermodynamics. Hence, further scaling of transistor necessitates novel approaches while maintaining high performance. So far, there are three main parallel paths of overcoming sub-threshold degradation, which are enhancing gate control, using the band-to-band tunneling (BTBT) mechanism and change the capacitance of oxide layer, the corresponding solutions are FinFET/gateall-around FET(GAAFET), tunnel FET(TFET) and negative capacitance field-effect transistor (NC-FET), respectively. This paper mainly explores the feasibility of utilization of NC-FETs as a promising solution with the Ferroelectric-Dielectric materials, thereby evaluating the prospect of NC-FETs as a potential candidate to continue reducing sub-threshold slope degradation. Several critical issues of NC-FETs that are not favorable to application due to their intrinsic features, such as hysteresis, are analyzed, including the latest research efforts aimed at tackling those problems.


NCFET, Ferroelectrics, Hysteresis

Cite This Paper

Zifan Xu. Prospect for Overcoming Sub-threshold Slope Degradation with NC-FETs. Academic Journal of Materials & Chemistry (2023) Vol. 4, Issue 7: 69-76. https://doi.org/10.25236/AJMC.2023.040711.


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