With the continuous development of new power systems, the insulated gate bipolar transistor (IGBT) has become the core component of power converters. Its failure rate has a critical impact on the safety and stability of the overall operation of the circuit. Frequent failures will not only result in equipment downtime, but may also lead to more serious system failures. Therefore, in this paper, the finite element analysis software COMSOL is used to construct the thermal-stress coupling field model of IGBT, and the stress caused by the thermal field is analysed over the lifetime of the IGBT device. The results show that the increase of heat flux promotes the heat flow, which reduces the surface temperature of the IGBT chip, and then relieves the stress at the root of the bonding line and the edge of the solder layer. The closer the thermal expansion coefficient between the contacting materials, the more the expansion rate tends to be the same as the temperature rises, and finally the stress reduction effect is achieved. The experimental results provide a theoretical and data basis for reducing the stress at the root of the bonding wire and at the edge of the solder layer, thereby extending the life of the IGBT. 

Fei Wu, Zikang He. Analysis of heat-stress coupling field and optimisation strategy for IGBT power converters. International Journal of Frontiers in Engineering Technology (2024), Vol. 6, Issue 6: 59-65. https://doi.org/10.25236/IJFET.2024.060609.

[1] Eckert J J ,Társis Prado Barbosa, Silva S F D ,et al.Electric hydraulic hybrid vehicle powertrain design and optimization-based power distribution control to extend driving range and battery life cycle[J]. Energy Conversion and Management, 2022, 252:115094.DOI: 10.1016/j.enconman. 2021. 115094.

[2] Tanriverdi O, Yldrm D. Independent closed loop control of di/dt and dv/dt for high power IGBTs [J].Turkish Journal of Electrical Engineering & Computer Sciences, 2022, 30(3). DOI:10.55730/1300-0632.3793.

[3] Tanrverdi O, Yildirim D. Analog dv/dt and di/dt Controlled Gate Driver With Self-Triggered Hold-at-Zero Algorithm for High-Power IGBTs[J].IEEE Transactions on Power Electronics, 2024(1 Pt.2):39.DOI:10.1109/TPEL.2023.3316260.

[4] Heimler P, Guenther M, Kuenzel J B T .Influence of thermal interface material using discrete Si-IGBTs and consideration of power cycling conditions[J].Microelectronics and reliability, 2023, 150(Nov.):1.1-1.7.

[5] Lahlaci M E, Miloudi M, Miloudi H .Experimental electromagnetic compatibility of conducted electromagnetic interferences from an iGBT and a MOSFET in the power supply[J].Electrical Engineering & Electromechanics, 2024(3).DOI:10.20998/2074-272X.2024.3.05.

[6] Wu Z .A Review of Symmetry-Based Open-Circuit Fault Diagnostic Methods for Power Converters [J].Symmetry (20738994), 2024, 16(2).DOI:10.3390/sym16020204.

[7] Kozak M, Gordon R .A Novel Method for Diagnosing Power Electronics Devices Using Elastic Wave Emission[J].energies, 2023, 16(21).DOI:10.3390/en16217405.

[8] Aretxabaleta I, Inigo M D A, Ignacio Garate J,et al.Multiple current amplifier-based gate driving for parallel operation of discrete SiC MOSFETs[J].IET Power Electronics, 2022(4):15.DOI: 10.1049/ pel2.12232.

[9] Zhang H, Zuo D, Li Y .High-power three-phase interleaved parallel NPC structure DC-DC converter modeling and simulation[J].IOP Publishing Ltd, 2024.DOI:10.1088/1742-6596/2831/1/ 012006.

[10] Li Q, Bian R, Fang X,et al.Fast locating method of MMC lower tube IGBT open-circuit fault based median error between the actual and the predicted value of the capacitor voltage[J].Energy Reports, 2022.DOI:10.1016/j.egyr.2022.02.001.

[11] Das S C, Narayanan G .Thermo-sensitive electrical parameters of high-power IGBTs based on gate-mitter voltage measurement during switching delay intervals[J].Microelectronics and reliability, 2023(Dec.):151.DOI:10.1016/j.microrel.2023.115258.

[12] Wang X, Lu X, Chen W,et al.A half-bridge IGBT drive and protection circuit in dielectric barrier discharge power supply[J].Circuit world, 2022.DOI:10.1108/CW-11-2020-0329.

[13] Prakobsant A , Prastiyanto D , Photong C .Optimum Power-Weight Ratio for Dual 3-Phase Induction Motor Drives for Regenerative Power Maximization[J].Przegląd Elektrotechniczny, 2024(7). DOI:10.15199/48.2024.07.51.

[14] Shahjalal M, Shams T, Hossain S B,et al.Thermal analysis of Si-IGBT based power electronic modules in 50kW traction inverter application[J].e-Prime - Advances in Electrical Engineering, Electronics and Energy, 2023, 3.DOI:10.1016/j.prime.2023.100112.

[15] Schuler L, Chamoin L, Khatir Z,et al.A Reduced Model Based on Proper Generalized Decomposition for the Fast Analysis of IGBT Power Modules Lifetime[J].Journal of electronic packaging: Transactions of the ASME, 2022.