Welcome to Francis Academic Press

Frontiers in Educational Research, 2026, 9(4); doi: 10.25236/FER.2026.090401.

Advancing Millimeter-Wave Design Competencies in Graduate CMOS RFIC Education: A Case Study on Transformer-Enhanced W-band Mixers

Author(s)

Benqing Guo1, Jing Gong2, Wenkai Duan1, Huifen Wang3

Corresponding Author:
Benqing Guo
Affiliation(s)

1Microelectronics School, Chengdu University of Information Technology, Chengdu, China

2West China Hospital, Sichuan University, Chengdu, China

3School of Civil Engineering and Architecture, Henan University of Technology, Zhengzhou, China

Abstract

With the industry's pivot toward 6G and the W-band (75-110 GHz), traditional RFIC education must transcend the limitations of low-frequency, idealized transistor models. This article introduces a pedagogical reform utilizing a high-performance W-band switched-transconductance mixer as a core instructional vehicle. The curriculum prioritizes the synthesis of complex magnetic structures, specifically trifilar transformers, to address the pervasive challenge of tail-node parasitics in millimeter-wave frequency conversion. By integrating electromagnetic-circuit (EM-circuit) co-simulation and linearity analysis of pseudo-differential stages, students are equipped to bridge the gap between textbook Gilbert cells and robust silicon implementations. Results from a post-graduate pilot program indicate a substantial enhancement in their ability to manage complex millimeter-wave trade-offs, showing a significant surge in their ability to perform robust PVT and Monte Carlo analyses.

Keywords

RFIC education, Millimeter-wave mixers, Transformers, 6G front-ends

Cite This Paper

Benqing Guo, Jing Gong, Wenkai Duan, Huifen Wang. Advancing Millimeter-Wave Design Competencies in Graduate CMOS RFIC Education: A Case Study on Transformer-Enhanced W-band Mixers. Frontiers in Educational Research (2026), Vol. 9, Issue 4: 1-7. https://doi.org/10.25236/FER.2026.090401.

References

[1] Razavi B. RF Microelectronics[M]. Second edition, Prentice Hall, 2012.

[2] Yang C, Guo B, Wang H, Wang Y, Chen J. A 30-39 GHz 3.1-3.4 NF 6.6 dBm IIP3 CMOS Low-Noise Amplifier With Post-Linearization Technique[C]. 2024 IEEE 67th International Midwest Symposium on Circuits and Systems (MWSCAS), 2024: 372-376.

[3] Guo B, Chen J. A mm-Wave Two-Stage CMOS LNA Using Noise Cancelling and Post-Distortion Techniques[C]. 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 2024: 407-410.

[4] Guo B. A 0.2–6 GHz 65 nm CMOS Active-Feedback LNA With Threefold Balun-Error Correction and Implicit Post-Distortion Technique[C]. 2025 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), San Francisco, CA, USA, 2025: 451–454. 

[5] Guo B, Chen J, Wang Y. A 0.2-3.3 GHz 2.4 dB NF 45 dB Gain Current-Mode Front-End for SAW-less Receivers in 180 nm CMOS[C]. 2019 8th International Symposium on Next Generation Electronics (ISNE), 2019: 1-3.

[6] Guo B, Shi Y, Wang Y, Wang H, Wang H, Wang T. Bridging Theory and Practice in CMOS Receiver Frontend Design: A Comprehensive Approach for Postgraduate Education[J]. Frontiers in Educational Research, 2025, 8(7): 112-119.

[7] Guo B, Shi Y, Wang Y, Wang H, Wang H, Wang T. Enhancing Student Engagement in RF Integrated Circuit Course through Simulation Practices Using Cadence and EMX[J]. Frontiers in Educational Research, 2025, 8(5): 177-183.

[8] Guo B, Liu H, Wang Y, Chen J, Wang H, Wang T. A 28.6-37.3 GHz 65nm CMOS Receiver Frontend with Symmetric-Load-Noise-Canceling LNA[C]. 2025 International Conference on Frontiers Technology in Circuits and Systems (FTCS), 2025: 442-446.

[9] Kargaran E, Guo B, Manstretta D, Castello R. A Sub-1-V, 350-μW, 6.5-dB Integrated NF Low-IF Receiver Front-End for IoT in 28-nm CMOS[J]. IEEE Solid-State Circuits Letters, 2019, 2(4): 29-32.

[10] Guo B, Chen J, Li L, Jin H, Yang G. A Wideband Noise-Canceling CMOS LNA With Enhanced Linearity by Using Complementary nMOS and pMOS Configurations[J]. IEEE Journal of Solid-State Circuits, 2017, 52(5): 1331-1344.

[11] Thijssen B J, Klumperink E A M, Quinlan P, Nauta B. 2.4-GHz Highly Selective IoT Receiver Front End With Power Optimized LNTA, Frequency Divider, and Baseband Analog FIR Filter[J]. IEEE Journal of Solid-State Circuits, 2021, 56(7): 2007-2017.

[12] Wang H, Guo B, Wang Y, Fan R, Sun L. A Baseband-Noise-Cancelling Mixer-First CMOS Receiver Frontend Attaining 220 MHz IF Bandwidth With Positive-Capacitive-Feedback TIA[J]. IEEE Access, 2023, 11: 26320-26328.

[13] Guo B, Wang H, Yang G. A Wideband Merged CMOS Active Mixer Exploiting Noise Cancellation and Linearity Enhancement[J]. IEEE Transactions on Microwave Theory and Techniques, 2014, 62(9): 2084-2091.

[14] Guo B, Wang H, Chen J, Deilamsalehi MM. A CMOS low-noise active mixer with enhanced linearity and isolation by exploiting capacitive neutralization technique[J]. Modern Physics Letters B, 2019, 33(18): 1950204.

[15] Guo B, Wang X, Chen H, Chen J. A 0.5–6.5 GHz 3.9-dB NF 7.2-mW active down-conversion mixer in 65 nm CMOS[J]. Modern Physics Letters B, 2018, 32(23): 1850278.

[16] Liu H, Guo B, Han Y, Wu J. An Integrated LNA-Phase Shifter in 65 nm CMOS for Ka-Band Phased-Array Receivers[J]. International Journal of Circuit Theory and Applications, 2024, 52(5): 2126-2145.

[17] Guo B, Wang X, Chen H. A 28 GHz Front-End for Phased Array Receivers in 180 nm CMOS Process[J]. Modern Physics Letters B, 2020, 34(supp01): 2150017.

[18] Guo B, Chen H, Wang X, Chen J, Xie X, Li Y. A 60 GHz Balun Low-Noise Amplifier in 28-nm CMOS for Millimeter-Wave Communication[J]. Modern Physics Letters B, 2019, 33(32): 1950396.

[19] Liao X, Guo B, Wang H. A 14.5 GHz Dual-Core Noise-Circulating CMOS VCO With Tripler Transformer Coupling, Achieving -123.6 dBc/Hz Phase Noise at 1MHz Offset[C]. 2024 IEEE 67th International Midwest Symposium on Circuits and Systems (MWSCAS), 2024: 377-381.

[20] Guo B, Liao X, Wang Y. A 22 mW CMOS Receiver Frontend Using Active-Feedback Baseband and Passive-Voltage Mixers Embedded in Current Mirrors[C]. 2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2022: 324-328. 

[21] Fan R, Guo B. A 1-11 GHz Balun CMOS LNA Achieving 1.9-dB NF Gain-Error< 0.15 dB and Phase-Error< 0.9° [C]. 2024 IEEE 67th International Midwest Symposium on Circuits and Systems (MWSCAS), 2024: 382-386. 

[22] Guo B, Gong J. A Dual-Band Low-Noise CMOS Switched-Transconductance Mixer With Current-Source Switch Driven by Sinusoidal LO Signals[C]. 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), 2021: 741-744.

[23] Fan R, Guo B, Wang H, Wang H, Chen J. A Broadband Single-Ended Active-Feedforward-Noise-Canceling LNA With IP2 Enhancement in Stacked n/pMOS Configurations[J]. Microelectronics Journal, 2024, 149: 106257.

[24] Guo B, Yang G, An S. A Wideband Noise-Canceling CMOS LNA Using Cross-Coupled Feedback and Bulk Effect[J]. Frequenz, 2014, 68(5-6): 243-249.

[25] Guo B, Wang H, Li L, Zhou W. A 65 nm CMOS Current-Mode Receiver Frontend With Frequency-Translational Noise Cancelation and 425 MHz IF Bandwidth[C]. 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2023: 21-24.

[26] Guo B, Chen H, Wang X, Li L, Zhou W. A Wideband Receiver Front-End With Low Noise and High Linearity by Exploiting Reconfigurable Dual Paths in 180 nm CMOS[J]. Modern Physics Letters B, 2021, 35(12): 2150210.

[27] Guo B, Wang H, Wang Y, Li K, Li L, Zhou W. A Mixer-First Receiver Frontend With Resistive-Feedback Baseband Achieving 200 MHz IF Bandwidth in 65 nm CMOS[C]. 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2022: 31-34.

[28] Guo B, Gong J, Wang Y, Wu J. A 0.2-3.3 GHz 2.4 dB NF 45 dB Gain CMOS Current-Mode Receiver Front-End[J]. Modern Physics Letters B, 2020, 34(22): 2050226.

[29] Guo B, Gong J, Wang Y. A Wideband Differential Linear Low Noise Transconductance Amplifier With Active-Combiner Feedback in Complementary MGTR Configurations[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2021, 68(1): 224-237.

[30] Guo B, Li X. A 1.6-9.7 GHz CMOS LNA Linearized by Post Distortion Technique[J]. IEEE Microwave and Wireless Components Letters, 2013, 23(11): 608-610.

[31] Guo B, Chen J, Chen H, Wang X. A 0.1-1.4 GHz Inductorless Low-Noise Amplifier With 13 dBm IIP3 and 24 dBm IIP2 in 180 nm CMOS[J]. Modern Physics Letters B, 2018, 32(02): 1850009.

[32] Guo B, et al. Low-Frequency Noise in CMOS Switched-gm Mixers: A Quasi-Analytical Model[J]. IEEE Access, 2020, 8: 191219-191230.

[33] Pini G, Manstretta D, Castello R. Analysis and Design of a 260-MHz RF Bandwidth +22-dBm OOB-IIP3 Mixer-First Receiver With Third-Order Current-Mode Filtering TIA[J]. IEEE Journal of Solid-State Circuits, 2020, 55(7): 1819-1829.

[34] Wu J, Guo B, Wang H, Liu H, Li L, Zhou W. A 2.4 GHz 87μW Low-Noise Amplifier in 65 nm CMOS for IoT Applications[J]. Modern Physics Letters B, 2021, 35(32): 2150485.

[35] Guo B, Yang G, Bin X. A differential CMOS common-gate LNA linearized by cross-coupled post distortion technique[J]. Frequenz, 2014, 68(5–6): 235–241.

[36] Chen J, Guo B, Zhao F, Wang Y, Wen G. A low-voltage high-swing Colpitts VCO with inherent tapped capacitors based dynamic body bias technique[C]. 2017 IEEE International Symposium on Circuits and Systems (ISCAS), 2017: 1–4.

[37] Guo B, Chen J, Wang Y, Jin H, Yang G. A Wideband Complementary Noise Cancelling CMOS LNA[C]. 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2016: 142-145.

[38] Guo B, Fan R, Wang Y, Chen J, Wang H, Wang T. A broadband CMOS LNA with ultra-low balun error and enhanced power efficiency[J]. AEU-International Journal of Electronics and Communications, 2026, 204: 156118. 

[39] Guo B, Wang H, Wang H, Li L, Zhou W, Jalali K. A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS[J]. IET Circuits, Devices & Systems, 2022, 16(7): 543–552.

[40] Bhat A N, van der Zee R, Finocchiaro S, Dantoni F, Nauta B. A Baseband-Matching-Resistor Noise-Canceling Receiver Architecture to Increase In-Band Linearity Achieving 175MHz TIA Bandwidth With a 3-Stage Inverter-Only OpAmp[C]. 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019: 155-158.

[41] Guo B, Chen J. A wideband common‐gate CMOS LNA employing complementary MGTR technique[J]. Microwave and Optical Technology Letters, 2017, 59(7): 1668–1671.

[42] Chen J, Guo B, Zhang B, Wen G. A Highly Linear Wideband CMOS LNTA Employing Noise/Distortion Cancellation and Gain Compensation[J]. Circuits, Systems, and Signal Processing, 2017, 36(2): 474–494.

[43] Guo B, Chen H, Wang X, Chen J, Li Y, Jin H, Yang Y. A Wideband CMOS Single-Ended Low Noise Amplifier Employing Negative Resistance Technique[J]. Modern Physics Letters B, 2018, 32(06): 1850068.

[44] Guo B, Chen J, Chen H, Wang X, Liu C. An Inductorless Noise-Cancelling CMOS LNA Using Wideband Linearization Technique[C]. 2017 IEEE 12th International Conference on ASIC (ASICON), 2017: 690-693.

[45] Guo B, Chen J, Wang X, Chen H. An Inductorless Active Mixer Using Stacked nMOS/pMOS Configuration and LO Shaping Technique[J]. Modern Physics Letters B, 2018, 32(11): 1850129.

[46] Zhang H, Sánchez-Sinencio E. Linearization Techniques for CMOS Low Noise Amplifiers: A Tutorial [J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2011, 58(1): 22-36.

[47] Guo B, Chen J. A CMOS Wideband Linear Low-Noise Amplifier Using Dual Capacitor-Cross-Coupled Configurations[C]. 2024 IEEE International Symposium on Circuits and Systems (ISCAS), 2024: 1-4.

[48] Xiang Y, Li L, Yuan S, Zhou W, Guo B. Metrics, Noise Propagation Models, and Design Framework for Floating-Point Approximate Computing[J]. IEEE Access, 2021, 9: 71039-71052.

[49] Guo B, Liao X, Wang H. A Wide IF Baseband-Noise-Cancelling CMOS Analog Receiver With Current-Mirror TIA[C]. 2022 10th International Symposium on Next-Generation Electronics (ISNE), 2023: 1-3.

[50] Guo B, Chen J, Li Y, Jin H, Yang Y, Chen W. A Wideband Common-Gate LNA With Enhanced Linearity by Using Complementary MGTR Technique[C]. 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016: 1540-1542.